- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄1963 > PIC16F526-I/SL (Microchip Technology)IC PIC MCU FLASH 1KX12 14SOIC PDF資料下載
參數(shù)資料
| 型號(hào)： | PIC16F526-I/SL |
| 廠商： | Microchip Technology |
| 文件頁數(shù)： | 107/122頁 |
| 文件大小： | 0K |
| 描述： | IC PIC MCU FLASH 1KX12 14SOIC |
| 產(chǎn)品培訓(xùn)模塊： | 8-bit PIC® Microcontroller Portfolio |
| 標(biāo)準(zhǔn)包裝： | 57 |
| 系列： | PIC® 16F |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 20MHz |
| 外圍設(shè)備： | POR，WDT |
| 輸入/輸出數(shù)： | 11 |
| 程序存儲(chǔ)器容量： | 1.5KB（1K x 12） |
| 程序存儲(chǔ)器類型： | 閃存 |
| RAM 容量： | 67 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 3x8b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 14-SOIC（0.154"，3.90mm 寬） |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 638 (CN2011-ZH PDF) |
| 配用： | ICE2000-ND - EMULATOR MPLAB-ICE 2000 POD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁當(dāng)前第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁
2009 Microchip Technology Inc.
DS39689F-page 85
PIC18F2221/2321/4221/4321 FAMILY
7.5
Writing to Flash Program Memory
The minimum programming block is 4 words or 8 bytes.
Word or byte programming is not supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 8 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte,
the TBLWT instruction may need to be executed 8 times
for each programming operation. All of the table write
operations will essentially be short writes because only
the holding registers are written. At the end of updating
the 8 holding registers, the EECON1 register must be
written to in order to start the programming operation with
a long write.
The long write is necessary for programming the
internal Flash. Instruction execution is halted while in a
long write cycle. The long write will be terminated by
the internal programming timer.
The EEPROM on-chip timer controls the write time.
The write/erase voltages are generated by an on-chip
charge pump, rated to operate over the voltage range
of the device.
FIGURE 7-5:
TABLE WRITES TO FLASH PROGRAM MEMORY
7.5.1
FLASH PROGRAM MEMORY
WRITE SEQUENCE
The sequence of events for programming an internal
program memory location should be:
1.
Read 64 bytes into RAM.
2.
Update data values in RAM as necessary.
3.
Load Table Pointer register with address being
erased.
4.
Execute the row erase procedure.
5.
Load Table Pointer register with address of first
byte being written.
6.
Write the 8 bytes into the holding registers.
7.
Set the EECON1 register for the write operation:
set EEPGD bit to point to program memory;
clear the CFGS bit to access program memory;
set WREN to enable byte writes.
8.
Disable interrupts.
9.
Write 55h to EECON2.
10. Write 0AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for duration of the write (about
2 ms using internal timer).
13. Repeat from step 5 seven more times.
14. Re-enable interrupts.
15. Verify the memory (table read).
This procedure will require about 18 ms to update one
row of 64 bytes of memory. An example of the required
code is given in Example 7-3.
Note:
The default value of the holding registers on
device Resets and after write operations is
FFh. A write of FFh to a holding register
does not modify that byte. This means that
individual bytes of program memory may be
modified, provided that the modification
does not attempt to change any bit from a
‘0’ to a ‘1’. When modifying individual bytes,
it is not necessary to load all 8 holding
registers before executing a write operation.
TABLAT
TBLPTR = xxxxx7
TBLPTR = xxxxx1
TBLPTR = xxxxx0
Write Register
TBLPTR = xxxxx2
Program Memory
Holding Register
8
Note:
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the 8 bytes in
the holding register.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PIC16F59-I/PT | IC PIC MCU FLASH 2KX12 44TQFP |
| PIC16F616-I/P | IC PIC MCU FLASH 2KX14 14DIP |
| PIC16F628-20I/SS | IC MCU FLASH 2KX14 COMP 20SSOP |
| PIC16F639-I/SS | IC MCU FLASH 2KX14 20SSOP |
| PIC16F648A-I/ML | IC MCU FLASH 4KX14 EEPROM 28QFN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PIC16F526T-I/MG | 功能描述:8位微控制器 -MCU 1.5KB 64B 8MHz Internal Oscillator RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16F526T-I/SL | 功能描述:8位微控制器 -MCU 15KB 64B 8MHz 8B ADC Internal Oscillator RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16F526T-I/SL030 | 制造商:Microchip Technology Inc 功能描述: |
| PIC16F526T-I/SL031 | 制造商:Microchip Technology Inc 功能描述: |
| PIC16F526T-I/SL033 | 制造商:Microchip Technology Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。