參數(shù)資料
型號: PIC16C621A
廠商: Microchip Technology Inc.
元件分類: 8位微控制器
英文描述: EPROM-Based 8-Bit CMOS Microcontroller
中文描述: 存儲器為基礎(chǔ)的8位CMOS微控制器
文件頁數(shù): 82/108頁
文件大小: 645K
代理商: PIC16C621A
PIC16C62X
DS30235G-page 82
Preliminary
1998 Microchip Technology Inc.
12.2
DC CHARACTERISTICS:
PIC16LC62X-04 (Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
–40C
0C
TA
+70C for commercial and
–40C
Operating voltage V
DD
range as described in DC spec Table 12-1 and Table 12-2
Characteristic
Min
TA
+85C for industrial and
TA
+125C for extended
Param
No.
Sym
Typ Max Units
Conditions
D001
V
DD
Supply Voltage
3.0
2.5
-
6.0
6.0
V
XT and RC osc configuration
LP osc configuration
Device in SLEEP mode
D002
V
DR
RAM Data Retention
Voltage (Note 1)
V
DD
start voltage to
ensure Power-on Reset
V
DD
rise rate to ensure
Power-on Reset
Brown-out Detect Voltage
Supply Current (Note 2)
1.5*
V
D003
V
POR
V
SS
V
See section on Power-on Reset for
details
See section on Power-on Reset for
details
BOREN configuration bit is cleared
XT and RC osc configuration
F
OSC
= 2.0 MHz, V
DD
= 3.0V, WDT dis-
abled (Note 4)
LP osc configuration
F
OSC
= 32 kHz, V
DD
= 3.0V, WDT dis-
abled
V
DD
=3.0V, WDT disabled
V
DD
=3.0V
BOR enabled, V
DD
= 5.0V
D004
S
VDD
0.05*
V/ms
D005
D010
V
BOR
I
DD
3.7
4.0
1.4
4.3
2.5
V
D010A
26
53
mA
μ
A
D020
I
PD
I
WDT
I
BOR
Power Down Current (Note 3)
WDT Current (Note 5)
Brown-out Reset Current
(Note 5)
Comparator Current for each
Comparator (Note 5)
V
REF
Current (Note 5)
These parameters are characterized but not tested.
Data in "Typ" column is at 5.0V, 25
°
C, unless otherwise stated. These parameters are for design guidance only and are not
tested.
This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
,
MCLR = V
DD
; WDT enabled/disabled as specified.
The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the
part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
to V
SS
.
For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the
formula Ir = V
DD
/2Rext (mA) with Rext in k
.
The
current is the additional current consumed when this peripheral is enabled. This current should be added to the
base I
DD
or I
PD
measurement.
0.7
6.0
350
2
15
425
μ
A
μ
A
μ
A
D023
I
COMP
I
VREF
100
300
μ
A
μ
A
V
DD
= 3.0V
V
DD
= 3.0V
*
Note 1:
2:
3:
4:
5:
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