Absolute Maximum Ratings
參數(shù)資料
型號(hào)： PIC12F519T-I/SN
廠商： Microchip Technology
文件頁數(shù)： 60/96頁
文件大小： 0K
描述： IC PIC MCU FLASH 1KX12 8SOIC
產(chǎn)品培訓(xùn)模塊： Asynchronous Stimulus
標(biāo)準(zhǔn)包裝： 3,300
系列： PIC® 12F
核心處理器： PIC
芯體尺寸： 8-位
速度： 8MHz
外圍設(shè)備： POR，WDT
輸入/輸出數(shù)： 5
程序存儲(chǔ)器容量： 1.5KB（1K x 12）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 41 x 8
電壓 - 電源 (Vcc/Vdd)： 2 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
包裝： 帶卷 (TR)
其它名稱： PIC12F519T-I/SNTR
2008 Microchip Technology Inc.
DS41319B-page 61
PIC12F519
11.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings()
Ambient temperature under bias.......................................................................................................... -40°C to +125°C
Storage temperature ............................................................................................................................ -65°C to +150°C
Voltage on VDD with respect to VSS ...............................................................................................................0 to +6.5V
Voltage on MCLR with respect to VSS..........................................................................................................0 to +13.5V
Voltage on all other pins with respect to VSS ............................................................................... -0.3V to (VDD + 0.3V)
Total power dissipation(1) .................................................................................................................................. 700 mW
Max. current out of VSS pin ................................................................................................................................ 200 mA
Max. current into VDD pin ................................................................................................................................... 150 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
...................................................................................................................±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
...........................................................................................................±20 mA
Max. output current sunk by any I/O pin .............................................................................................................. 25 mA
Max. output current sourced by any I/O pin ......................................................................................................... 25 mA
Max. output current sourced by I/O port .............................................................................................................. 75 mA
Max. output current sunk by I/O port ................................................................................................................... 75 mA
Note 1:
Power dissipation is calculated as follows: PDIS = VDD x {IDD –
∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL)
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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