參數(shù)資料
型號(hào)： PIC12F519T-I/MS
廠商： Microchip Technology
文件頁(yè)數(shù)： 17/96頁(yè)
文件大?。?/td> 0K
描述： IC PIC MCU FLASH 1KX12 8MSOP
產(chǎn)品培訓(xùn)模塊： Asynchronous Stimulus
標(biāo)準(zhǔn)包裝： 2,500
系列： PIC® 12F
核心處理器： PIC
芯體尺寸： 8-位
速度： 8MHz
外圍設(shè)備： POR，WDT
輸入/輸出數(shù)： 5
程序存儲(chǔ)器容量： 1.5KB（1K x 12）
程序存儲(chǔ)器類(lèi)型： 閃存
RAM 容量： 41 x 8
電壓 - 電源 (Vcc/Vdd)： 2 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-TSSOP，8-MSOP（0.118"，3.00mm 寬）
包裝： 帶卷 (TR)
配用： AC162096-ND - HEADER MPLAB ICD2 PIC16F526 8/14
AC164325-ND - MODULE SKT FOR 8MSOP
其它名稱： PIC12F519T-I/MSTR
PIC12F519
DS41319B-page 22
2008 Microchip Technology Inc.
5.2.2
WRITING TO FLASH DATA
MEMORY
Once a cell is erased, new data can be written. Pro-
gram execution is suspended during the write cycle.
The following sequence must be performed for a single
byte write.
1.
Load EEADR with the address.
2.
Load EEDATA with the data to write.
3.
Set the WREN bit to enable write access to the
array.
4.
Set the WR bit to initiate the erase cycle.
If the WR bit is not set in the instruction cycle after the
WREN bit is set, the WREN bit will be cleared in
hardware.
Sample code that follows this procedure is included in
EXAMPLE 3:
WRITING A FLASH DATA
MEMORY ROW
5.3
Write Verify
Depending on the application, good programming
practice may dictate that data written to the Flash data
memory be verified. Example 4 is an example of a write
verify.
EXAMPLE 4:
WRITE VERIFY OF DATA
EEPROM
5.4
Code Protection
Code protection does not prevent the CPU from per-
forming read or write operations on the Flash data
memory. Refer to the code protection chapter for more
information.
Note 1:
Only a series of BSF commands will work
to enable the memory write sequence
documented in Example 2. No other
sequence of commands will work, no
exceptions.
2:
For reads, erases and writes to the Flash
data memory, there is no need to insert a
NOP
into the user code as is done on
mid-range devices. The instruction imme-
diately
following
the
“BSF
EECON,WR/RD” will be fetched and
executed properly.
BANKSEL
EEADR
MOVLW
EE_ADR_WRITE
; LOAD ADDRESS
MOVWF
EEADR
;
MOVLW
EE_DATA_TO_WRITE ; LOAD DATA
MOVWF
EEDATA
; INTO EEDATA REGISTER
BSF
EECON,WREN
; ENABLE WRITES
BSF
EECON,WR
; INITITATE ERASE
MOVF
EEDATA, W
;EEDATA has not changed
;from previous write
BSF
EECON, RD
;Read the value written
XORWF
EEDATA, W
;
BTFSS
STATUS, Z
;Is data the same
GOTO
WRITE_ERR
;No, handle error
;Yes, continue
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