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參數(shù)資料
| 型號(hào)： | PI74FCT574DTSE |
| 廠(chǎng)商： | Pericom Semiconductor Corp. |
| 英文描述： | Fast CMOS Octal D Registers (3-State) |
| 中文描述： | 快速CMOS八路D寄存器（3態(tài)） |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 163K |
| 代理商： | PI74FCT574DTSE |
3
PS2016C 10/01/04
PI74FCT374T
PI74FCT574T
Octal D Registers (3-State)
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DC Electrical Characteristics
(Over the Operating Range, T
A
= –40°C to +85°C, V
CC
= 5.0V ± 5%)
Parameters Description
Test Conditions
(1)
Min. Typ
(2)
Max. Units
V
OH
Output HIGH Voltage
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OH
= –15.0 mA
2.4
3.0
V
V
OL
Output LOW Current
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OL
= 64 mA
0.3
0.55
V
V
OL
Output LOW Current
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OL
= 12 mA (25
Series)
0.3
0.50
V
V
IH
Input HIGH Voltage
Guaranteed Logic HIGH Level
2.0
V
V
IL
Input LOW Voltage
Guaranteed Logic LOW Level
0.8
V
I
IH
Input HIGH Current
V
CC
= Max.
V
IN
= V
CC
1
μA
I
IL
Input LOW Current
V
CC
= Max.
V
IN
= GND
–1
μA
I
OZH
High Impedance
V
CC
= M
AX
.
V
OUT
= 2.7V
1
μA
I
OZL
Output Current
V
OUT
= 0.5V
–1
μA
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= –18 mA
–0.7
–1.2
V
I
OFF
Power Down Disable
V
CC
= GND, V
OUT
= 4.5V
—
—
100
μA
I
OS
Short Circuit Current
V
CC
= Max.
(3)
, V
OUT
= GND
–60
–120
mA
V
H
Input Hysteresis
200
mV
Capacitance
(T
A
= 25°C, f = 1 MHz)
Parameters
(4)
Description
Test Conditions
Typ
Max.
Units
C
IN
Input Capacitance
V
IN
= 0V
6
10
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This parameter is determined by device characterization but is not production tested.
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