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參數(shù)資料
| 型號(hào)： | PI0512HSN |
| 英文描述： | 25-レm-Pitch Wide Aperture Spectroscopic Photodiode Arrays |
| 中文描述： | 25 -レ米間距寬孔徑光譜光電二極管陣列 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 555K |
| 代理商： | PI0512HSN |
PI0256HSN, PI0512HSN, PI1024HSN
Engineering Data Sheet
Page 2 of 8
March 13, 2002
Figure 2. Geometry and layout of photodiode pixels.
During normal operation, the photons incident in or
near the NP photodiode junction generate free charges
that are collected and stored on the junction's depletion
capacitance. The number of collected charges is
proportional to the light exposure. Figure 3 shows the
stored signal charge as function of light exposure at a
wavelength of 575 nm. The exposure is the product of
the light intensity in nW/cm
2
and integration time in
seconds. The charge accumulates linearly until reach-
ing the saturation charge, and the corresponding
exposure is the saturation exposure. There are two
saturation limits which are described in the Selectable
Charge Capacity section below.
The responsivity may be calculated as the saturation
charge divided by saturation exposure. The predicted
typical responsivity of a photodiode is 1.5
×
10
-4
C/J/cm
2
at 575 nm. Figure 4 shows the predicted responsivity
of the photodiodes as a function of wavelength.
Figure 3. Stored signal charge as function of exposure at
a wavelength of 575 nm.
2 Dummy
Pixels
Active Pixels
25μm
2 Dummy
Pixels
2500μm
0
10
20
30
40
50
60
70
80
0
100
200
300
400
500
Exposure (nJ/cm
2
)
O
saturation
w/o cap
saturation with cap
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