參數(shù)資料
型號(hào): PHW8N50E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-247, 3 PIN
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 90K
代理商: PHW8N50E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP8N50E, PHB8N50E, PHW8N50E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
December 1998
7
Rev 1.300
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