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參數(shù)資料
| 型號： | PHP87N03T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| 中文描述： | 75 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | PHP87N03T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP87N03T
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
2
1
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 30 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
10 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
Gate-source breakdown
voltage
Drain-source on-state
resistance
I
G
=
±
1 mA;
R
DS(ON)
V
GS
= 10 V; I
D
= 25 A
-
-
9
-
10.5
19.5
m
m
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
I
D
= 75 A; V
DD
= 24 V; V
GS
= 10 V
MIN.
9
-
-
-
-
-
-
-
-
-
-
-
TYP.
18
51
9
29
2700
700
300
26
35
50
30
3.5
MAX.
-
-
-
-
3300
800
330
30
85
60
45
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 25 V; I
D
= 25 A;
V
= 10 V; R
G
= 5
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
September 1997
2
Rev 1.100
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