- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367938 > PHP87N03LT (NXP SEMICONDUCTORS) N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) PDF資料下載
參數(shù)資料
| 型號： | PHP87N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| 中文描述： | 75 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 99K |
| 代理商： | PHP87N03LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP87N03LT, PHB87N03LT
PHD87N03LT
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.05
K/W
SOT78 package, in free air
SOT404 or SOT428 package, pcb
mounted, minimum footprint
-
-
60
50
-
-
K/W
K/W
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 45 A; V
DD
≤
15 V;
V
GS
= 5 V; R
GS
= 50
; T
mb
= 25 C
MIN.
-
MAX.
200
UNIT
mJ
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
25
22
1
0.5
-
-
-
-
12
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2
-
-
-
2.3
9
10.5
8.5
9.5
-
19.5
51
-
10
100
0.05
10
-
500
39
-
9
-
18.5
-
9
15
54
70
136
160
85
100
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 25 A
V
GS
= 10 V; I
= 25 A
V
GS
= 5 V; I
D
= 25 A; T
j
= 175C
V
DS
= 25 V; I
D
= 25 A
m
m
m
S
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
g
fs
I
GSS
I
DSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V
DS
= 25 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 75 A; V
DD
= 15 V; V
GS
= 5 V
V
DD
= 15 V; I
D
= 25 A;
V
= 10 V; R
G
= 5
Resistive load
Internal drain inductance
Internal drain inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
-
-
3.5
4.5
-
-
nH
nH
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
2304
620
448
-
-
-
pF
pF
pF
October 1999
2
Rev 1.600
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHB87N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| PHB8N50E | PowerMOS transistors Avalanche energy rated |
| PHW8N50E | PowerMOS transistors Avalanche energy rated |
| PHP8N50E | PowerMOS transistors Avalanche energy rated |
| PHBF0410-FEC | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP87N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP8N20E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP8N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP8ND50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHP-8P8C-S-5 | 制造商:Panduit Corp 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。
