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參數(shù)資料
| 型號(hào)： | PHP50N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level FET |
| 中文描述： | 48 A, 25 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | PHP50N03LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP50N03LT, PHB50N03LT
PHD50N03LT
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
oss
, C
rss
.
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
)
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
maximum
VDS = 5 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
40
45
50
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 50A
Tj = 25 C
VDD = 15 V
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0
5
10
15
20
25
30
35
40
45
50
0
0.1
0.2
0.3
0.4
0.5
Source-Drain Voltage, VSDS (V)
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
October 1999
5
Rev 1.800
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHD50N03LT | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管) |
| PHB50N03 | N-channel TrenchMOS transistor Logic level FET |
| PHB50N03T | TrenchMOS transistor Standard level FET |
| PHB50N06LT | TrenchMOS transistor Logic level FET |
| PHB50N06T | TrenchMOS transistor Standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP50N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP50N06 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP50N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHP52N06T | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP52N06T,127 | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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