參數(shù)資料
型號: PHP4N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 8/9頁
文件大?。?/td> 80K
代理商: PHP4N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP4N60E, PHB4N60E
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.20. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.21. SOT404 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
December 1998
8
Rev 1.200
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