參數(shù)資料
型號: PHP4N40E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 4.4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 2/9頁
文件大?。?/td> 78K
代理商: PHP4N40E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP4N40E, PHB4N40E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 2.7 A;
t
p
= 0.28 ms; T
j
prior to avalanche = 25C;
V
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
195
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 4.4 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
5.7
mJ
I
AS
, I
AR
-
4.4
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.5
K/W
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
60
50
-
-
K/W
K/W
1
pulse width and repetition rate limited by T
j
max.
December 1998
2
Rev 1.200
相關(guān)PDF資料
PDF描述
PHB4N60E PowerMOS transistors Avalanche energy rated
PHP4N60E PowerMOS transistors Avalanche energy rated
PHB50N03LT N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應(yīng)管)
PHB50N06 TrenchMOS transistor Standard level FET
PHP50N03LT N-channel TrenchMOS transistor Logic level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP4N50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
PHP4N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
PHP4ND40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated
PHP-4P2C-5 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述:
PHP-4P4C-5 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述: