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參數(shù)資料
| 型號： | PHP3N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.8 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 79K |
| 代理商： | PHP3N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP3N60E, PHB3N60E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHP2N60
1ms
1s
Zth j-mb, Transient thermal impedance (K/W)
1us
10us
100us
tp, pulse width (s)
10ms
100ms
0.001
0.01
0.1
1
10
D =
tp
tp
T
T
P
D
t
D = 0.5
0.2
single pulse
0.02
0.05
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
1
2
3
4
5
PHP2N60
10 V
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5.5 V
5 V
6 V
VGS = 4.5 V
10
100
1000
10000
0.1
1
10
100
PHP2N60
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
100 us
1 ms
10 ms
100 ms
RDSON =VDSID
DC
tp = 10 us
0
1
2
3
4
5
0
2
4
6
8
10
PHP2N60
5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
VGS = 4.5 V
Tj = 25 C
6 V
December 1998
4
Rev 1.200
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