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| 型號： | PHP3N60 |
| 英文描述： | Micropower Low Dropout References; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 600V的MOSFET功率晶體管4.8A 125W至- 220AB現(xiàn)有（51.69十一） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 51K |
| 代理商： | PHP3N60 |
Philips Semiconductors
Product specification
PowerMOS transistor
PHP3N60
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx55-mv
D =
D =
t
p
t
p
T
T
P
t
D
0
50
100
150
0
20
40
60
80
100
120
PHP6N60E
Tmb / C
ID%
Normalised Current Derating
0
5
10
15
20
25
30
0
2
4
6
8
10
12
PHP3N60
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5 V
5.5 V
6 V
10 V
7 V
VGS = 4.5 V
10
100
1000
10000
0.1
1
10
100
PHP3N60
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
100 us
1 ms
10 ms
RDSON =VDSID
DC
tp = 10 us
0
2
4
6
8
10
12
0
1
2
3
4
5
6
PHP3N60
Tj = 25 C
VGS = 5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
6 V
February 1997
3
Rev 1.000
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