- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367938 > PHP3N50E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號： | PHP3N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 3.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 78K |
| 代理商： | PHP3N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP3N50E, PHB3N50E
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 1.7 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
VGS, Gate-Source voltage (Volts)
4
6
8
10
0
1
2
3
4
5
6
7
8
PHP3N50
ID, Drain current (Amps)
VDS > ID x RDS(on)max
Tj = 150 C
Tj = 25 C
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
2.5
3
PHP3N50
ID, Drain current (A)
gfs, Transconductance (S)
VDS > ID x RDS(on)max
Tj = 25 C
150 C
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
1
10
100
1000
1
10
100
1000
PHP3N50
VDS, Drain-Source voltage (Volts)
Junction capacitances (pF)
Ciss
Coss
Crss
December 1998
5
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHB3N60E | PowerMOS transistors Avalanche energy rated |
| PHP3N60E | PowerMOS transistors Avalanche energy rated |
| PHB42N03T | TrenchMOS transistor Standard level FET |
| PHB44N06T | TrenchMOS transistor Standard level FET |
| PHB45N03T | TrenchMOS transistor Standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP3N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET POWER TRANSISTOR 600V 4.8A 125W TO-220AB(51.69 k) |
| PHP3N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP42N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHP42N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP440 | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 623V 15KW 2PIN CASE 11 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。