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參數(shù)資料
| 型號(hào)： | PHP1N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | PHP1N50E |
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP1N50E
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2.5
UNIT
K/W
R
th j-a
-
60
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 0.25 mA
V
DS
= 500 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
30 V; V
= 0 V
V
GS
= 10 V; I
D
= 1 A
2.0
-
-
-
-
3.0
10
0.1
10
4.5
4.0
100
1.0
100
5.0
V
μ
A
mA
nA
I
GSS
R
DS(ON)
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
V
SD
I
F
= 2 A ;V
GS
= 0 V
-
0.8
1.2
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
Q
g(tot)
Total gate charge
Q
gs
Gate to source charge
Q
gd
Gate to drain (Miller) charge
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
t
rr
Source-drain diode reverse
recovery time
Q
rr
Source-drain diode reverse
recovery charge
L
d
Internal drain inductance
CONDITIONS
V
DS
= 15 V; I
D
= 1 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.9
230
35
14
10
1
5
10
30
30
20
350
MAX.
-
300
50
30
-
-
-
15
45
40
30
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
GS
= 10 V; I
D
= 2 A; V
DS
= 400 V
V
DD
= 30 V; I
D
= 2 A;
V
GS
= 10 V; R
GS
= 50
;
R
GEN
= 50
I
F
= 2 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 100 V
-
2.5
-
μ
C
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
3.5
-
nH
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
October 1996
2
Rev 1.000
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