參數(shù)資料
型號(hào): PHN708
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 7 N-channel 80 mohm FET array enhancement mode MOS transistors
中文描述: 3100 mA, 30 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AG
封裝: PLASTIC, SSOP-24
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 92K
代理商: PHN708
1998 Mar 17
8
Philips Semiconductors
Product specification
7 N-channel 80 m
FET array
enhancement mode MOS transistors
PHN708
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
t
p
= 300
μ
s;
δ
= 0.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
65
°
C.
handbook, halfpage
IS
(A)
0
(1)
(2)
(3)
0.4
VSD (V)
0.8
1.2
6
2
0
4
MDA793
Fig.11 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
amb
= 25
°
C; t
p
= 300
μ
s;
δ
= 0.
(1) I
D
= 0.3 A.
(2) I
D
= 0.75 A.
(3) I
D
= 1.5 A.
(4) I
D
= 3.1 A.
(5) I
D
= 5 A.
(6) I
D
= 7.5 A.
(7) I
D
= 10 A.
(8) I
D
= 12.4 A.
handbook, halfpage
10
0
2
4
VGS (V)
RDSon
(
)
6
8
1
10
1
10
2
MDA794
(1)(2)
(4)(5)(6)(7)
(3)
(8)
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