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參數(shù)資料
| 型號(hào)： | PHM8001 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MOSFET MODULE Single 900A/150A |
| 中文描述： | 640 A, 150 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 130K |
| 代理商： | PHM8001 |
0
0.5
1
1.5
2
2.5
3
3.5
4
0
200
400
600
800
1000
1200
1400
1600
Drain to Source Voltage V
DS
V)
D
Fig.1- Output Characteristics Typical)
T
C
=25
℃
4V
V
GE
=10V
3V
2V
8V
250
μ
s PULSE TEST
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Gate to Source Voltage V
GS
V)
D
Fig.2- Drain to Source On Voltage
vs. Gate to Source Voltage Typical)
T
C
=25
℃
I
D
=200A
I
D
=400A
I
D
=800A
250
μ
s PULSE TEST
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
Junction Temperature Tj
℃
)
D
Fig.3- Drain to Source On Voltage
vs. Junction Temperature Typical)
V
GS
=10V
I
D
=200A
I
D
=400A
I
D
=800A
250
μ
s PULSE TEST
0.5
1
2
5
10
20
50
80
0
25000
50000
75000
100000
125000
150000
175000
200000
Drain to Source Voltage V
DS
V)
C
Fig.4- Capacitance vs. Drain to Source Voltage Typical)
Ciss
Coss
Crss
V
GS
=0V
f=1MH
Z
T
C
=25
℃
0
1000
2000
3000
4000
5000
6000
7000
0
2
4
6
8
10
12
14
16
Total Gate Charge Qg nC)
G
Fig.5- Gate Charge vs. Gate to Source Voltage Typical)
V
DD
=80V
I
D
=800A
V
DD
=40V
V
DD
=20V
0.5
1
2
5
10
20
50
100
200
0.1
0.2
0.5
1
2
5
10
20
50
100
Series Gate Impedance R
G
Ω
)
S
μ
s
Fig.6- Series Gate Impedance vs. Switching Time Typical)
V
DD
=80V
I
D
=400A
T
C
=25
℃
tf
tr
td(on)
td(off)
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