參數(shù)資料
型號(hào)： PHD50N03LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管)
中文描述： 48 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, DPAK-3
文件頁(yè)數(shù)： 9/11頁(yè)
文件大?。?/td> 108K
代理商： PHD50N03LT
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP50N03LT, PHB50N03LT
PHD50N03LT
MECHANICAL DATA
Fig.18. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT428
98-04-07
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
D1
w
A
M
b
c
b1
L1
L
1
3
2
D
E1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
max.
b
D1
max.
E
max.
HE
max.
w
y
max.
A2
b2
b1
max.
c
E1
e
e1
L1
min.
L2
L
A
max.
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.7
0.5
6.73
6.47
4.0
2.95
2.55
October 1999
9
Rev 1.800
相關(guān)PDF資料
PDF描述
PHB50N03 N-channel TrenchMOS transistor Logic level FET
PHB50N03T TrenchMOS transistor Standard level FET
PHB50N06LT TrenchMOS transistor Logic level FET
PHB50N06T TrenchMOS transistor Standard level FET
PHB55N03LT N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHD50N06LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
PHD55N03LT 制造商:NXP Semiconductors 功能描述: 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-252AA
PHD55N03LT/T3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR POWER MOSFET D-PAK
PHD55N03LTA 制造商:NXP Semiconductors 功能描述:55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
PHD55N03LTA,118 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*