- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367938 > PHB8N50E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號： | PHB8N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 90K |
| 代理商： | PHB8N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP8N50E, PHB8N50E, PHW8N50E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1ms
1s
0.001
0.01
0.1
1
PHP6N60
Zth j-mb, Transient thermal impedance (K/W)
1us
10us
100us
tp, pulse width (s)
10ms
100ms
D =
t
p
t
p
T
T
P
t
D
D = 0.5
0.2
0.05
0.02
single pulse
0.1
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
5.5 V
6 V
6.5 V
7 V
10 V
PHP8N50
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5 V
VGS = 4.5 V
1
10
100
1000
VDS / V
ID / A
100
10
1
0.1
BUK457-500B
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
RDSON =VDSID
0
5
10
15
20
25
0
0.5
1
1.5
2
PHP8N50
Tj = 25 C
5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
VGS = 6 V
6.5 V
7 V
December 1998
4
Rev 1.300
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHW8N50E | PowerMOS transistors Avalanche energy rated |
| PHP8N50E | PowerMOS transistors Avalanche energy rated |
| PHBF0410-FEC | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| PHBF0510-FEC | CONDUIT SCREENED 25MMX10M |
| PHC025 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB8N50T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.7A I(D) | SOT-404 |
| PHB8ND50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB95N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
| PHB95N03LTA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 22V V(BR)DSS | 75A I(D) | TO-263AB |
| PHB95NQ04LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。