參數(shù)資料
型號: PHB45N03T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 45 A, 30 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 7/8頁
文件大小: 66K
代理商: PHB45N03T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHB45N03T
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.18. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.19. SOT404 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
December 1997
7
Rev 1.200
相關(guān)PDF資料
PDF描述
PHB4N40E PowerMOS transistors Avalanche energy rated
PHP4N40E PowerMOS transistors Avalanche energy rated
PHB4N60E PowerMOS transistors Avalanche energy rated
PHP4N60E PowerMOS transistors Avalanche energy rated
PHB50N03LT N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB45N03TT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | SOT-404
PHB45NQ10T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHB45NQ10T /T3 功能描述:MOSFET TRENCH-100 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB45NQ10T,118 功能描述:MOSFET TRENCH-100 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB45NQ15T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET