參數(shù)資料
型號(hào)： PHB37N06LT
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： TrenchMOS transistor Logic level FET
中文描述： 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-404, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 79K
代理商： PHB37N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP37N06LT, PHB37N06LT, PHD37N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 37 A
R
DS(ON)
≤
35 m
(V
GS
= 5 V)
R
DS(ON)
≤
32 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP37N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB37N06LT is supplied in the SOT404 surface mounting package.
The PHD37N06LT is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
37
26
148
100
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
2
3
tab
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
September 1998
1
Rev 1.400
相關(guān)PDF資料
PDF描述
PHD37N06LT TrenchMOS transistor Logic level FET
PHP37N06T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管)
PHP3N40E PowerMOS transistors Avalanche energy rated
PHB3N40E PowerMOS transistors Avalanche energy rated
PHD3N40E PowerMOS transistors Avalanche energy rated
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB37N06LTT/R 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 37A I(D) | SOT-404
PHB37N06T 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
PHB37N06TT/R 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 37A I(D) | SOT-404
PHB38N02LT 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:TrenchMOS logic level FET
PHB38N02LT,118 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*