參數(shù)資料
型號(hào)： PHB18NQ20T
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管)
中文描述： 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 96K
代理商： PHB18NQ20T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP18NQ20T, PHB18NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 200 V
I
D
= 16 A
R
DS(ON)
≤
180 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using
Trench
technology, intended for use in off-line
switchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuits
and general purpose switching applications.
The PHP18NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB18NQ20T is supplied in the SOT404 (D
2
PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
16
11
64
136
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.000
相關(guān)PDF資料
PDF描述
PHP18NQ20T N-channel TrenchMOS transistor
PHB193NQ06T N-channel TrenchMOS standard level FET
PHP193NQ06T N-channel TrenchMOS standard level FET
PHB21N06T TrenchMOS transistor Standard level FET
PHB24N03LT TrenchMOS transistor Logic level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB191NQ06LT 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHB191NQ06LT,118 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB191NQ06LT118 制造商:NXP Semiconductors 功能描述:
PHB193NQ06T 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
PHB193NQ06T,118 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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