參數(shù)資料
型號： PH2226-110M
英文描述： Dual/Quad Precision Zero-Drift Operational Amplifiers With Internal Capacitors; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C
中文描述： 晶體管|晶體管|叩| 63V五（巴西）總裁|第15A一（c）
文件頁數(shù)： 1/2頁
文件大?。?/td> 211K
代理商： PH2226-110M
Radar Pulsed Power Transistor, 110 Watts,
2.25-2.55 GHz, 100
μ
S Pulse, 10% Duty
Features
Q
NPN Silicon Microwave Power Transistor
Q
Common Base Configuration
Q
Broadband Class C Operation
Q
Diffused Emitter Ballasting Resistors
Q
Gold Metalization System
Q
Internal Input and Output Impedance Matching
Q
Hermetic Metal/Ceramic Package
P
Outline Drawing
8/21/02
Rev. 3
Electrical Characteristics at 25 °C
Parameter
Symbol
Min.
Max.
Units
Test Conditions
Collector-Emitter Breakdown
Voltage
BV
CES
63
-
V
I
C
=40 mA
Collector-Emitter Leakage
Current
I
CES
-
7.5
mA
V
CE
=36 V
Thermal Resistance
R
TH(JC)
-
0.3
°C/W
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Output Power
P
O
110
-
W
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Power Gain
G
P
7.4
-
dB
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Collector Efficiency
η
40
-
%
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Input Return Loss
RL
9
-
dB
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Load Mismatch Tolerance
VSWR-T
-
3:1
-
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Absolute Maximum Ratings at 25 °C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
63
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
15
A
Total Power Dissipation
@ +45 °C
Storage Temperature
P
TOT
583
W
T
STG
-65 to +200
°C
Junction Temperature
T
j
200
°C
相關(guān)PDF資料
PDF描述
PH2226-50M Zero-Drift Operational Amplifier; Package: PDIP; No of Pins: 14; Temperature Range: 0°C to +70°C
PH2323-4 Universal Dual Filter Building Block; Package: PDIP; No of Pins: 20; Temperature Range: 0°C to +70°C
PH2323-6 Universal Dual Filter Building Block; Package: PDIP; No of Pins: 20; Temperature Range: 0°C to +70°C
PH2520U TrenchMOS (tm) ultra low level FET
PH270F2 FRD MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH2226-11OM 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty 2.25 - 2.55 GHz
PH2226-50 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz
PH2226-50M 功能描述:射頻雙極電源晶體管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
PH22-3,50-K 功能描述:可插拔接線端子 3.50PS, 22 Pole,8A,300V, Green RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Plugs 系列:PTS 端接類型:Spring Cage 位置/觸點數(shù)量:5 線規(guī)量程:26-14 節(jié)距:5 mm 電流額定值:10 A 電壓額定值:250 V 安裝風格: 安裝角: 觸點電鍍:
PH22-3,81-K 功能描述:可插拔接線端子 3.81 PS, 22 Pole 8AMP 300V RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Plugs 系列:PTS 端接類型:Spring Cage 位置/觸點數(shù)量:5 線規(guī)量程:26-14 節(jié)距:5 mm 電流額定值:10 A 電壓額定值:250 V 安裝風格: 安裝角: 觸點電鍍:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*