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參數(shù)資料
| 型號： | PH1214-80M |
| 英文描述： | Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150ms Pulse, 10% Duty |
| 中文描述： | 雷達(dá)脈沖功率晶體管- 80瓦，1.20-1.40千兆赫，150毫秒脈沖，10％的稅 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | PH1214-80M |
Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150
s Pulse, 10% Duty
PH1214-80M
M/A-COM Division of AMP Incorporated
3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Electrical Specifications at 25°C
Radar Pulsed Power Transistor - 80 Watts,
1.20-1.40 GHz, 150
s Pulse, 10% Duty
PH1214-80M
Absolute Maximum Rating at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
70
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
6.4
A
Total Power Dissipation
@ +25°C
P
TOT
185
W
Storage Temperature
T
stg
-65 to +200
°C
Junction Temperature
T
j
200
°C
Broadband Test Fixture Impedance
F (GHz)
Z
IF ()Z OF ()
1.20
9.4 - j4.5
7.0 - j2.8
1.30
8.3 - j2.8
4.5 - j3.2
1.40
7.9 - j1.3
3.0 - j2.1
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CES
Collector-Emitter Breakdown
I
C = 35 mA
70
-
V
I
CES
Collector-Emitter Breakdown
V
CE = 40 V
-
3.5
mA
R
TH(JC)
Thermal Resistance
V
CC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
-
0.80
°C/W
P
O
Output Power
V
CC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
80
W
G
P
Power Gain
V
CC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
7.5
-
dB
η
Collector Efficiency
V
CC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
50
-
%
R
L
Input Return Loss
V
CC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
9
-
dB
VSWR-T
Load Mismatch Tolerance
V
CC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
-
3:1
-
VSWR-S
Load Mismatch Stability
V
CC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
-
1.5:1
-
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM’s PH1214-80M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weather radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-80M can produce 80 watts of output
power with medium pulse length (150 S) at 10 percent duty
cycle. The transistor is housed in a 2-lead, rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. Dissued emitter ballast resistors
and gold metalization assure ruggedness and long-term reliabil-
ity. In addition to L-band pulsed radars, this high performance
power transistor can also be used in pulsed digital communica-
tions systems.
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