參數(shù)資料
型號(hào): PF48F2P0VTQ0
廠商: Intel Corp.
英文描述: Intel StrataFlash Embedded Memory
中文描述: 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁數(shù): 45/102頁
文件大?。?/td> 1609K
代理商: PF48F2P0VTQ0
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
45
7.5
Program and Erase Characteristics
Num
Symbol
Parameter
V
PPL
V
PPH
Units Notes
Min
Typ
Max
Min
Typ
Max
Conventional Word Programming
W200 t
PROG/W
Program
Time
Single word
Single cell
-
-
90
30
200
60
-
-
85
30
190
60
μs
1
Buffered Programming
W200 t
PROG/W
W251 t
BUFF
Buffered Enhanced Factory Programming
W451 t
BEFP/W
Program
W452
Setup
Erasing and Suspending
W500 t
ERS/PB
Erase Time128-KByte Main
W501 t
ERS/MB
W600 t
SUSP/P
Suspend
Latency
W601 t
SUSP/E
Notes:
1.
Typical values measured at T
= +25 °C and nominal voltages. Performance numbers are valid for all
speed versions. Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.
Program
Time
Single word
32-word buffer
-
-
90
440
200
880
-
-
85
340
190
680
μs
1
Single word
n/a
n/a
n/a
-
10
-
μs
1,2
t
BEFP/
BEFP Setup
n/a
n/a
n/a
5
-
-
1
-
-
-
-
0.4
1.2
20
20
2.5
4.0
25
25
-
-
-
-
0.4
1.0
20
20
2.5
4.0
25
25
s
1
Program suspend
Erase suspend
μs
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