參數(shù)資料
型號： PF48F0P0VT00
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲器
文件頁數(shù)： 59/102頁
文件大?。?/td> 1609K
代理商： PF48F0P0VT00
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
59
10.3.5
WAIT Delay
The WAIT Delay (WD) bit controls the WAIT assertion-delay behavior during synchronous burst
reads. WAIT can be asserted either during or one data cycle before valid data is output on
DQ[15:0]. When WD is set, WAIT is deasserted one data cycle
before
valid data (default). When
WD is cleared, WAIT is deasserted
during
valid data.
10.3.6
Burst Sequence
The Burst Sequence (BS) bit selects linear-burst sequence (default). Only linear-burst sequence is
supported.
Table 25
shows the synchronous burst sequence for all burst lengths, as well as the
effect of the Burst Wrap (BW) setting.
Burst Sequence Word Ordering
10.3.7
Clock Edge
The Clock Edge (CE) bit selects either a rising (default) or falling clock edge for CLK. This clock
edge is used at the start of a burst cycle, to output synchronous data, and to assert/deassert WAIT.
10.3.8
Burst Wrap
The Burst Wrap (BW) bit determines whether 4-word, 8-word, or 16-word burst length accesses
wrap within the selected word-length boundaries or cross word-length boundaries. When BW is
set, burst wrapping does not occur (default). When BW is cleared, burst wrapping occurs.
When performing synchronous burst reads with BW set (no wrap), an output delay may occur
when the burst sequence crosses its first device-row (16-word) boundary. If the burst sequence’s
start address is 4-word aligned, then no delay occurs. If the start address is at the end of a 4-word
Table 25.
Start
Addr.
(DEC)
Burst Wrap
(RCR[3])
Burst Addressing Sequence (DEC)
4-Word Burst
(BL[2:0] = 0b001)
8-Word Burst
(BL[2:0] = 0b010)
16-Word Burst
(BL[2:0] = 0b011)
Continuous Burst
(BL[2:0] = 0b111)
0
1
2
3
4
5
6
7
…
14
15
…
0
1
2
3
4
5
6
7
…
14
15
0
0
0
0
0
0
0
0
…
0
0
…
1
1
1
1
1
1
1
1
…
1
1
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4…14-15
1-2-3-4-5…15-0
2-3-4-5-6…15-0-1
3-4-5-6-7…15-0-1-2
4-5-6-7-8…15-0-1-2-3
5-6-7-8-9…15-0-1-2-3-4
6-7-8-9-10…15-0-1-2-3-4-5 6-7-8-9-10-11-12-…
7-8-9-10…15-0-1-2-3-4-5-6 7-8-9-10-11-12-13…
…
14-15-0-1-2…12-13
15-0-1-2-3…13-14
…
0-1-2-3-4…14-15
1-2-3-4-5…15-16
2-3-4-5-6…16-17
3-4-5-6-7…17-18
4-5-6-7-8…18-19
5-6-7-8-9…19-20
6-7-8-9-10…20-21
7-8-9-10-11…21-22
…
14-15-16-17-18…28-29
15-16-17-18-19…29-30
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
4-5-6-7-8-9-10…
5-6-7-8-9-10-11…
…
…
…
14-15-16-17-18-19-20-…
15-16-17-18-19-20-21-…
…
…
…
0-1-2-3
1-2-3-4
2-3-4-5
3-4-5-6
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-8
2-3-4-5-6-7-8-9
3-4-5-6-7-8-9-10
4-5-6-7-8-9-10-11
5-6-7-8-9-10-11-12
6-7-8-9-10-11-12-13
7-8-9-10-11-12-13-14
…
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
4-5-6-7-8-9-10…
5-6-7-8-9-10-11…
6-7-8-9-10-11-12-…
7-8-9-10-11-12-13…
…
…
14-15-16-17-18-19-20-…
15-16-17-18-19-20-21-…
相關(guān)PDF資料
PDF描述
PF48F2P0VT00 Intel StrataFlash Embedded Memory
PF48F3P0VT00 Intel StrataFlash Embedded Memory
PF48F4P0VT00 Intel StrataFlash Embedded Memory
PF48F0P0ZB00 Intel StrataFlash Embedded Memory
PF48F2P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F0P0VTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F0P0ZB00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F0P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F0P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F0P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
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