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參數(shù)資料
| 型號： | PF08134B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 123K |
| 代理商： | PF08134B |
Rev.1.01, May 13, 2004, page 1 of 13
PF08134B
MOS FET Power Amplifier Module
for GSM850 and DCS1800/1900 Triple Band Handy Phone
REJ03G0075-0101Z
Rev.1.01
May 13, 2004
Application
Triple band amplifier for
GSM850 (824 MHz to 849 MHz) and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
For 3.5 V & GPRS Class12 operation compatible
Features
All in one including output matching circuit
Simple external circuit
Simple power control
High gain 3stage amplifier : 0 dBm input Typ
Lead less thin & Small package : 8.0
×
10.0
×
1.5 mm Max
High efficiency
47% Typ at 33.5 dBm for GSM850
47% Typ at 32.5 dBm for DCS1800
47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
1:
2:
3:
4:
5:
6:
7:
8:
G:
Pin
GSM
Vapc
Vdd1
Pout
GSM
Pout
DCS
& Pout
PCS
Vdd2
Vctl
Pin
DCS
& Pin
PCS
GND
RF-Q-8
12
34
G
5
87
6
G
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