參數(shù)資料
型號(hào): PF01412
廠商: Hitachi,Ltd.
英文描述: MOS FET Power Amplifier Module for E-GSM Handy Phone
中文描述: 場(chǎng)效應(yīng)晶體管功率放大器模塊,電子的GSM手持電話
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 25K
代理商: PF01412
PF01412A
2
Electrical Characteristics
(Tc = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
890
915
MHz
Control voltage range
V
APC
I
DS
0.5
3.0
V
Drain cutoff current
100
μ
A
V
DD
= 10 V, V
APC
= 0 V
Total efficiency
η
T
40
45
%
Pin = 1 mW, V
DD
= 5.5 V,
2nd harmonic distortion
2nd H.D.
–45
–35
dBc
Pout = 3.8 W, Vapc = controlled
3rd harmonic distortion
3rd H.D.
–45
–35
dBc
R
L
= Rg = 50
, Tc = 25
°
C
Input VSWR
VSWR (in)
1.5
3
Output power (1)
Pout (1)
3.8
4.5
W
Pin = 1 mW, V
DD
= 5.5 V,
V
APC
= 3.0 V, R
L
= Rg = 50
,
Tc = 25
°
C
Output power (2)
Pout (2)
2.5
3.2
W
Pin = 1 mW, V
DD
= 5.0 V,
V
APC
= 3.0 V, R
L
= Rg = 50
,
Tc = 80
°
C
Isolation
–50
–40
dBm
Pin = 1 mW, V
DD
= 5.5 V,
V
APC
= 0.5 V, R
L
= Rg = 50
,
Tc = 25
°
C
Switching time
tr, tf
1
2
μ
s
Pin = 1 mW, V
DD
= 5.5 V,
Pout = 3.8 W, R
L
= Rg = 50
,
Tc = 25
°
C
Stability &
Load VSWR tolerance
No parasitic oscillation
&
No degradation
Pin = 1 mW, V
DD
= 5 to 6 V,
Pout
3.8 W,
Vapc
3 V GSM pulse.
Rg = 50
, t = 20 sec., Tc = 25
°
C,
Output VSWR = 6 : 1 All phases
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