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參數(shù)資料
| 型號(hào)： | PESDXL4UW |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Low capacitance quadruple ESD protection array |
| 中文描述： | 低電容四路ESD保護(hù)陣列 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 85K |
| 代理商： | PESDXL4UW |
2004 Apr 06
3
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
PESDxL4UW series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Non-repetitive current pulse 8
/
20
μ
s exponentially decaying waveform see Fig.5.
Pins 1, 3, 4 or 5 to pin 2.
Device mounted on standard printed-circuit board.
ESD standards compliance
THERMAL CHARACTERISTICS
Notes
1.
Solder point of common anode (pin 2).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
pp
peak pulse current
PESD3V3L4UW
PESD5V0L4UW
peak pulse power
non-repetitive peak forward
current
non-repetitive peak reverse
current
PESD3V3L4UW
PESD5V0L4UW
total power dissipation
non-repetitive peak reverse
power dissipation
storage temperature
junction temperature
electrostatic discharge
8/20
μ
s; notes 1 and 2
3
2.5
30
3.5
A
A
W
A
P
pp
I
FSM
8/20
μ
s; notes 1 and 2
t
p
= 1 ms; square pulse
I
ZSM
t
p
= 1 ms; square pulse
0.9
0.8
250
6
A
A
mW
W
P
tot
P
ZSM
T
amb
= 25
°
C; note 3
t
p
= 1 ms; square pulse; see Fig.4
T
stg
T
j
ESD
65
20
10
+150
150
°
C
°
C
kV
kV
IEC 61000-4-2 (contact discharge)
HBM MIL-Std 883
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
>15 kV (air); >8 kV (contact)
>4 kV
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
R
th(j-sp)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
all diodes loaded
one diode loaded; note 1
all diodes loaded; note 1
370
135
125
K/W
K/W
K/W
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