參數(shù)資料
型號(hào): PESDXL2UM
廠商: NXP Semiconductors N.V.
英文描述: LJT 23C 21#20 2#16 PIN RECP
中文描述: 雙低電容ESD保護(hù)二極管
文件頁(yè)數(shù): 7/14頁(yè)
文件大小: 179K
代理商: PESDXL2UM
9397 750 14034
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 1 November 2005
7 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
T
amb
= 25
°
C
(1) PESD3V3L2BT and PESD5V0L2BT
(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3.
Peak pulse power as a function of exponential
pulse duration t
p
; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical values
T
amb
= 25
°
C; f = 1 MHz
(1) PESD3V3L2BT
(2) PESD5V0L2BT
T
amb
= 25
°
C; f = 1 MHz
(1) PESD12VL2BT
(2) PESD15VL2BT
(3) PESD24VL2BT
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
006aaa531
10
3
10
2
10
4
P
PP
(W)
10
t
p
(
μ
s)
1
10
4
10
3
10
10
2
(1)
(2)
T
j
(
°
C)
0
200
150
50
100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25
°
C)
V
R
(V)
0
5
4
2
3
1
006aaa067
70
90
100
110
C
d
(pF)
50
60
80
(1)
(2)
V
R
(V)
0
25
20
10
15
5
006aaa068
8
12
4
16
20
C
d
(pF)
0
(1)
(2)
(3)
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