參數(shù)資料
型號: PESD5V2S18U
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: ESD protection array
中文描述: 100 W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, MO-150AE
封裝: PLASTIC, MO-150, SSOP-20
文件頁數(shù): 2/8頁
文件大?。?/td> 86K
代理商: PESD5V2S18U
2003 Apr 28
2
Philips Semiconductors
Product specification
ESD protection array
PESD5V2S18U
FEATURES
Uni-directional ESD protection of
up to 18 lines
Maximum peak reverse power:
P
PP
= 100 W at t
p
= 8/20
μ
s
Low clamping voltage:
V
CL
= 12 V max. at I
ZSM
= 10 A
Low leakage current:
I
R
= 100 nA typ. at V
RWM
= 5.2 V
IEC 61000-4-2, level 4 (ESD);
15 kV (air) and 8 kV (contact).
APPLICATIONS
Printer parallel ports
Computers and peripherals
Communication systems.
DESCRIPTION
Monolithic ESD protection device
designed to protect up to
18 transmission or data lines from the
damage caused by electrostatic
discharge (ESD) and surge pulses.
PINNING
PIN
DESCRIPTION
1 to 5
6 and 16
7 to 15
17 to 20
cathode (k1 to k5)
common anode (a1; a2)
cathode (k6 to k14)
cathode (k15 to k18)
handbook, 4 columns
MHC510
19
18
17
16
15
14
13
12
11
20
2
3
4
5
6
7
8
9
10
1
1
10
20
11
Fig.1 Simplified outline (SSOP20; SOT339-1) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ESD standards compliance
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
PP
P
PP
non-repetitive peak reverse current
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
electrostatic discharge voltage
t
p
= 8/20
μ
s
t
p
= 8/20
μ
s
10
100
A
W
T
stg
T
j
65
65
+150
+150
°
C
°
C
kV
kV
IEC 61000-4-2 (contact discharge) 30
HBM MIL-Std 883
10
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
>15 kV (air); >8 kV (contact)
>4 kV
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