參數(shù)資料
型號: PDTA124XS
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 5/14頁
文件大?。?/td> 93K
代理商: PDTA124XS
2004 Aug 04
5
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 22 k
, R2 = 47 k
PDTA124X series
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 with 60
μ
m copper strip line.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
250
500
500
625
833
500
500
K/W
K/W
K/W
K/W
K/W
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
80
2
15.4
TYP.
0.8
1.1
22
MAX.
100
1
50
120
150
0.5
28.6
UNIT
I
CBO
I
CEO
collector-base cut-off current
collector-emitter cut-off current
V
CB
=
50 V; I
E
= 0 A
V
CE
=
30 V; I
B
= 0 A
V
CE
=
30 V; I
B
= 0; T
j
= 150
°
C
V
EB
=
5 V; I
C
= 0 A
V
CE
=
5 V; I
C
=
5 mA
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100
μ
A; V
CE
=
5 V
I
C
=
2 mA; V
CE
=
0.3 V
nA
μ
A
μ
A
μ
A
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
mV
V
V
k
resistor ratio
1.7
2.1
2.6
C
c
collector capacitance
I
E
= i
e
= 0 A; V
CB
=
10 V;
f = 1 MHz
3
pF
R1
相關(guān)PDF資料
PDF描述
PDTA124X PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm
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