參數(shù)資料
型號: PD60004
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SMT
中文描述: 晶體管| MOSFET的| N溝道| 65V的五(巴西)決策支持系統(tǒng)|貼片
文件頁數(shù): 1/5頁
文件大?。?/td> 67K
代理商: PD60004
1/5
TARGET DATA
November, 20 2001
PD60004
PD60004S
RF POWER TRANSISTORS
The LdmoSTPlastic FAMILY
Designed for GSM / EDGE / IS-97 applications
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 4 W with 11 dB gain @ 2000 MHz
DESCRIPTION
The PD60004 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies of
up to 2 GHz. PD60004 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD60004’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD60004
BRANDING
PD60004
PowerSO-10RF
(straight lead)
ORDER CODE
PD60004S
BRANDING
PD60004S
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
±
20
V
TBD
A
TBD
W
165
°
C
-65 to +175
°
C
THERMAL DATA
(T
CASE
= 70
°
C)
R
th(j-c)
Junction -Case Thermal Resistance
TBD
°
C/W
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
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