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參數(shù)資料
| 型號： | PD57006 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 277K |
| 代理商： | PD57006 |
PD57006 - PD57006S
2/14
ELECTRICAL SPECIFICATION (T
CASE
= 25
°
C)
STATIC
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
DYNAMIC
Symbol
P
OUT
G
P
IMPEDANCE DATA
Test Conditions
I
D
= 10 mA
V
DS
= 28 V
V
DS
= 0 V
Min.
Typ.
Max.
Unit
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 28 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
65
1
μ
A
μ
A
1
I
D
= 70 mA
I
D
= 0.5 A
I
D
= 800 mA
V
DS
= 28 V
V
DS
= 28 V
V
DS
= 28 V
2.0
5.0
V
0.9
V
0.58
mho
f = 1 MHz
27
pF
f = 1 MHz
14
pF
f = 1 MHz
0.9
pF
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 28 V
V
DD
= 28 V
V
DD
= 28 V
V
DD
= 28 V
ALL PHASE ANGLES
I
DQ
= 70 mA
I
DQ
= 70 mA
I
DQ
= 70 mA
I
DQ
= 70 mA
f = 945 MHz
6
W
P
OUT
= 6 W f = 945 MHz
P
OUT
= 6 W f = 945 MHz
P
OUT
= 6 W f = 945 MHz
14
15
dB
η
D
45
50
%
Load
mismatch
10:1
VSWR
PIN CONNECTION
GATE
SOURCE
DRAIN
SC15200
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
SC13140
PD57006S
FREQ. MHz
Z
IN
(
)
Z
DL
(
)
925
3.794 - j 1.632
3.513 + j 10.81
945
4.039 - j 2.300
3.862 + j 10.58
960
4.250 - j 3.791
4.005 + j 11.34
PD57006
FREQ. MHz
Z
IN
(
)
Z
DL
(
)
925
6.040 - j 0.936
6.273 + j 8.729
945
5.886 - j 2.326
6.578 + j 5.999
960
6.056 - j 3.522
7.215 + j 7.539
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD57006-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY |
| PD57006-E | 功能描述:射頻MOSFET電源晶體管 RF POWER TRANS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57006-E_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| PD57006S | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 1.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57006S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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