參數(shù)資料
型號: PD57002S
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS The LdmoST Plastic FAMILY
中文描述: 射頻功率晶體管LdmoST塑料家庭
文件頁數(shù): 6/16頁
文件大?。?/td> 131K
代理商: PD57002S
PD57002 - PD57002S
6/16
COMMON SOURCE S-PARAMETER
(PD57002)
(V
DS
= 28V I
DS
= 75mA)
FREQ
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
IS
11
I
IS
21
I
IS
12
I
S
12
∠Φ
IS
22
I
S
22
∠Φ
0.980
0.972
0.966
0.951
0.944
0.936
0.925
0.926
0.924
0.919
0.921
0.915
0.920
0.922
0.921
0.922
0.924
0.922
0.926
0.919
0.920
0.918
0.916
0.921
0.912
0.914
0.914
0.908
0.909
0.900
-16
-31
-46
-59
-70
-80
-90
-98
-105
-112
-117
-122
-127
-131
-135
-138
-141
-145
-147
-150
-153
-155
-158
-160
-162
-164
-166
-168
-170
-172
10.01
9.63
9.04
8.46
7.78
7.09
6.50
5.93
5.43
4.96
4.52
4.17
3.84
3.55
3.31
3.07
2.87
2.69
2.52
2.38
2.24
2.13
2.02
1.92
1.84
1.76
1.68
1.61
1.54
1.45
166
153
141
129
119
110
101
93
85
78
72
66
61
56
51
46
42
38
34
30
27
23
19
16
12
9
6
3
0
-3
0.006
0.012
0.017
0.020
0.023
0.025
0.026
0.026
0.026
0.027
0.027
0.026
0.026
0.024
0.024
0.023
0.022
0.021
0.020
0.019
0.018
0.018
0.017
0.016
0.015
0.014
0.013
0.013
0.012
0.011
75
64
53
42
32
23
16
8
2
-2
-9
-15
-20
-25
-29
-33
-38
-39
-43
-45
-49
-51
-56
-60
-62
-70
-71
-75
-88
-108
0.963
0.949
0.942
0.918
0.911
0.896
0.885
0.888
0.886
0.897
0.894
0.896
0.904
0.914
0.920
0.929
0.937
0.934
0.931
0.938
0.941
0.941
0.943
0.940
0.943
0.944
0.942
0.947
0.940
0.934
-12
-23
-35
-45
-54
-63
-70
-77
-83
-89
-95
-99
-104
-108
-112
-116
-119
-123
-125
-128
-131
-134
-136
-138
-141
-143
-144
-146
-148
-149
S
11
∠Φ
S
21
∠Φ
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PD57006 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 1.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57006-01 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY
PD57006-E 功能描述:射頻MOSFET電源晶體管 RF POWER TRANS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57006-E_10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs