參數(shù)資料
型號： PD55008L
廠商： 意法半導(dǎo)體
英文描述： RF POWER TRANSISTORS The LdmoST Plastic FAMILY
中文描述： 射頻功率晶體管LdmoST塑料家庭
文件頁數(shù)： 1/9頁
文件大?。?/td> 86K
代理商： PD55008L
1/9
ADVANCED DATA
May, 29 2003
PD55008L
RF POWER TRANSISTORS
The LdmoSTPlastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 8 W with 17 dB gain @ 500 MHz / 12.5V
INTEGRATED ESD PROTECTION
NEW LEADLESS PLASTIC PACKAGE
SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD55008L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies up
to 1 GHz.
PD55008L boasts the excellent gain, linearity and
reliability of STH1LV latest LDMOS technology
mounted in the innovative leadless SMD plastic
package, PowerFLAT
. PD55008L’s superior
linearity performance makes it an ideal solution for
car mobile radio.
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
40
V
-0.5 to 15
V
5
A
19.5
W
150
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
4.1
°
C/W
ORDER CODE
PD55008L
BRANDING
55008
PowerFLAT
(5x5)
PIN CONNECTION
TOP VIEW
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD55008L-E 功能描述:射頻MOSFET電源晶體管 RF POWER transistor LDMOST family N-Chan RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55008S 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 4 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55008S-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55008STR 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 4.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55008STR-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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