參數(shù)資料
型號: PD55008
廠商: 意法半導體
英文描述: RF POWER TRANSISTORS The LdmoST Plastic FAMILY
中文描述: 射頻功率晶體管LdmoST塑料家庭
文件頁數(shù): 2/10頁
文件大?。?/td> 118K
代理商: PD55008
PD55008 - PD55008S
2/10
PD55008S
Frequency
MHz
Zin
Zdl
520
1.586 - j2.087
3.082 + j2.043
500
1.409 - j3.448
2.129 + j3.219
480
1.075 - j2.727
2.046 +j1.960
PIN CONNECTION
SOURCE
DRAIN
GATE
SC15200
ELECTRICAL SPECIFICATION
(T
CASE
= 25
0
C)
STATIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
I
DSS
V
GS
= 0 V
V
DS
= 28 V
1
μ
A
I
GSS
V
GS
= 20 V
V
DS
= 0 V
1
μ
A
V
GS(Q)
V
DS
= 10 V
I
D
= 150 mA
2.0
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 1.5 A
1.0
V
g
FS
V
DS
= 10 V
I
D
= 1.5 A
1.6
mho
C
ISS
V
GS
= 0 V
V
DS
= 12.5 V
f = 1 MHz
58
pF
C
OSS
V
GS
= 0 V
V
DS
= 12.5 V
f = 1 MHz
39
pF
C
RSS
V
GS
= 0 V
V
DS
= 12.5 V
f = 1 MHz
2.6
pF
DYNAMIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
P
OUT
f = 500 MHz
V
DD
= 12.5 V
I
DQ
= 150 mA
8
W
G
PS
f = 500 MHz
V
DD
= 12.5 V
P
OUT
= 8 W
I
DQ
= 150 mA
17
dB
η
D
f = 500 MHz
V
DD
= 12.5 V
P
OUT
= 8 W
I
DQ
= 150 mA
55
%
LOAD
Mismatch
f = 500 MHz
ALL PHASE ANGLES
V
DD
= 15.5 V
P
OUT
= 8 W
I
DQ
= 150 mA
20:1
VSWR
PD55008
Frequency
MHz
Zin
Zdl
520
1.649 - j1.965
1.716 - j1.552
500
1.589 - j1.185
1.561 - j2.639
480
1.141 - j2.054
1.649 - j2.916
D
S
Typical Input
Impedance
Zin
G
Z
DL
Typical Drain
Load Impedance
SC13140
IMPEDANCE DATA
相關(guān)PDF資料
PDF描述
PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD55015 RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD55015-PD55015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD55015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD57002 RF POWER TRANSISTORS The LdmoST Plastic FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD55008-E 功能描述:射頻MOSFET電源晶體管 RF POWER TRANS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55008-E_10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD55008L 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 4 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55008L-E 功能描述:射頻MOSFET電源晶體管 RF POWER transistor LDMOST family N-Chan RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55008S 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 4 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray