參數(shù)資料
型號(hào): PD55003-01
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 2.5A I(D) | LLCC
中文描述: 晶體管| MOSFET的| N溝道| 40V的五(巴西)直| 2.5AI(四)| LLCC
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 46K
代理商: PD55003-01
1/5
TARGET DATA
June, 24 2002
PD55003-01
RF POWER TRANSISTORS
The LdmoSTPlastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 3 W with 17 dB gain @ 500 MHz / 12.5 V
NEW LEADLESS PLASTIC PACKAGE
DESCRIPTION
The PD55003-01 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003-01 boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT.
PD55003-01’s superior linearity performance
makes it an ideal solution for car mobile radio.
ORDER CODE
PD55003-01
BRANDING
PD55003-01
PowerFLAT
(5x5)
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
40
V
±
20
V
2.5
A
TBD
W
150
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
TBD
°
C/W
相關(guān)PDF資料
PDF描述
PD55008STR RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY
PD55008TR RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD55003-E 功能描述:射頻MOSFET電源晶體管 RF POWER TRANS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55003-E-E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD55003L 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55003L-E 功能描述:射頻MOSFET電源晶體管 RF POWER transistor LDMOST family N-Chan RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55003S 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray