參數(shù)資料
型號(hào): PD54003-PD54003S
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS The LdmoST Plastic FAMILY
中文描述: 射頻功率晶體管LdmoST塑料家庭
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 115K
代理商: PD54003-PD54003S
3/10
PD54003 - PD54003S
Capacitance vs. Drain Voltage
0
5
10
15
VDD, DRAIN VOLTAGE (V)
1
10
100
1000
C
f =1MHz
Ciss
Coss
Crss
Drain Current vs. Gate Voltage
1
2
3
4
5
6
7
8
9
VGS, GATE-SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
I
Vds=10V
Gate-Source Voltage vs. Case Temperature
-25
0
25
50
75
100
Tc, CASE TEMPERATURE (
°
C)
0.92
0.94
0.96
0.98
1
1.02
1.04
1.06
V
Vds=10V
I
D
=1.5A
I
D
=2A
I
D
=0.5A
I
D
=0.25A
I
D
=1A
TYPICAL PERFORMANCE
相關(guān)PDF資料
PDF描述
PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD54003S 功能描述:射頻MOSFET電源晶體管 N-Ch 25 Volt 4.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD54003S-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD54003STR-E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD54003TR-E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD54008 功能描述:射頻MOSFET電源晶體管 N-Ch 25 Volt 5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray