
PHOTO DIODES
2.4; 3.6
μ
m
M
M
o
o
d
d
e
e
l
l
P
P
D
D
2
2
3
3
-
-
0
0
2
2
2
2
.
.
3
3
m
m
0
0
.
.
2
2
m
m
Photodiodes
PD23-02
are designed for detecting the radiation in the Middle
Infrared spectral range from 800 to 2300 nm. Heterostructures with the InGaAsSb
sensitive layer and the AlGaAsSb "window" are grown on GaSb substrates.
Photodiodes
PD23-02
are mounted in standard 5.4 mm package TO-18. They
have
the photosensitive area with diameter of 200
μ
m. Fast response makes possible
their use for the detection of high frequency modulated laser or LED emission.
Related products:
PD23-02
can be used in optical pair with our
LED16÷LED23
and
LD200÷LD230
. We offer the preamplifier model
AM-04
suitable for
PD23-02
.
Parameters
Min
Typ
Max
Cut-off wavelength,
μ
m (at 10%)
Responsivity, A/W (
λ
=1.95÷2.1
μ
m)
Dark Current,
μ
A ( V= - 0.2 V )
( V= - 0.5 V )
( V= - 1.0 V )
Impedance, kOhm (V= -10 mV)
Capacitance, pF (V=0, f=1 MHz)
Rise and Fall Time, ns (V=0, 50 Ohm)
Detectivity,
cm.Hz
1/2
/W (
λ
p,1000,1)
Operating Temperature
Range,
o
C
Sensitive area diameter,
μ
m
Soldering temperature
Package
2.30
2.30
2.35
0.9
1.0
1.1
0.5
1.0
1.5
30
10
1
1.0
2.0
3.0
60
20
3
2.0
3.0
5.0
100
30
5
8.10
10
4.10
10
5.10
10
-40
÷
+50
200
260
o
C
TO-18
Spectral Response
Typical characteristic t= + 25C
0
20
40
60
80
100
0,8
2,3
Wavelength, mm
R
PD23-02
Capacitance vs. Reverse Voltage
Typical characteristic
T= 300 K
8
10
12
14
16
18
0
0,2
Reverse Voltage (V)
0,4
0,6
0,8
1
C
PD23-02
Spectral Response
Typical characteristic
0,0001
0,001
0,01
0,1
1
10
0
0,5
Reverse bias, U, Volts
1
1,5
2
2,5
3
D
μ
A
T=300 K
T=230 K
T=160 K
PD23-02
t= + 20C
Temperature dependance of cut-off
Typical characteristics
0
20
40
60
80
100
1,6
1,8
2
2,2
2,4
2,6
2,8
Wavelength,
μ
m
R
T =+23 C
T = - 43 C
T = - 113 C
PD23-
GaSb
(substr.)
GaInAsSb
AlGaAsSb
PD23
Basic Circuit Connections
Output voltage
V
out
= -
(I
ph
*R
f
)
PD23-02
I
ph
R
f
C
f
Package TO-18