參數(shù)資料
型號(hào)： PCF51AC256BCPUE
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 33/42頁(yè)
文件大小： 0K
描述： MCU 8BIT 256K FLASH 64-LQFP
標(biāo)準(zhǔn)包裝： 160
系列： MCF51AC
核心處理器： Coldfire V1
芯體尺寸： 32-位
速度： 50MHz
連通性： I²C，SCI，SPI
外圍設(shè)備： LVD，PWM，WDT
輸入/輸出數(shù)： 54
程序存儲(chǔ)器容量： 256KB（256K x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 32K x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 20x12b
振蕩器型： 外部
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-LQFP
包裝： 托盤
Electrical Characteristics
MCF51AC256 ColdFire Microcontroller Data Sheet, Rev.7
Freescale Semiconductor
39
2.14
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
2.14.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East). For more detailed information concerning the evaluation results, conditions
and setup, please refer to the EMC Evaluation Report for this device.
Table 21. Flash Characteristics
Num
C
Characteristic
Symbol
Min
Typical1
1 Typical values are based on characterization data at V
DD = 5.0 V, 25 C unless otherwise stated.
Max
Unit
1
—
Supply voltage for program/erase
Vprog/erase
2.7
—
5.5
V
2
—
Supply voltage for read operation
VRead
2.7
—
5.5
V
3
—
Internal FCLK frequency2
2 The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
4
—
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
s
5
—
Byte program time (random location)2
tprog
9tFcyc
6
—
Byte program time (burst mode)2
tBurst
4tFcyc
7
—
Page erase time3
3 These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
8
—
Mass erase time2
tMass
20,000
tFcyc
9C
Program/erase endurance4
TL to TH = –40 C to 105 C
T = 25
C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
—
10,000
—
100,000
—
cycles
10
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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