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參數(shù)資料
| 型號： | PBYR7025WT-25 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| 中文描述： | 肖特基整流二極管（肖特基勢壘整流二極管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | PBYR7025WT-25 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR7025WT series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 150 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
PBYR7025WT
0
5
10
15
20
25
0
10
Average forward current, IF(AV) (A)
20
30
40
50
Forward dissipation, PF (W)
Tmb(max) (C)
150
D = 1.0
0.5
0.2
0.1
145.5
141
136.5
T
tp
D = tp/T
127.5
132
Reverse Current, IR (mA) PBYR7025WT
0.01
0.1
1
10
100
1000
0
5
10
Reverse Voltage, VR (V)
15
20
25
30
Tj =25C
Tj =75C
Tj =50C
Tj =100C
Tj =125C
PBYR7025WT
0
2
4
6
8
10
12
14
16
18
0
5
10
15
20
25
30
35
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) (C)
150
a = 1.57
1.9
2.2
2.8
148.2
146.4
144.6
142.8
141
139.2
4
137.4
133.8
135.6
PBYR7025WT
100
1000
10000
1
10
100
VR / V
Cd / pF
PBYR7025WT
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Forward Voltage, VF (V)
Forward Current, IF (A)
Tj = 25 C
Tj = 125 C
typ
max
PBYR7025WT
0.001
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
pulse width, tp (s)
1E-02
1E-01
1E+00
1E+01
Transient Thermal Impedance, Zth j-mb (K/W)
Single pulse
tp
P
t
D
December 1998
3
Rev 1.000
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