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參數(shù)資料
| 型號(hào)： | PBYR6040WT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢(shì)壘整流二極管) |
| 中文描述： | 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-247 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | PBYR6040WT |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR6045WT series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
PBYR6045WT
0
5
10
15
20
25
30
0
10
Average forward current, IF(AV) (A)
20
30
40
50
Forward dissipation, PF (W)
Tmb(max) (C)
150
D = 1.0
0.5
0.2
0.1
145
135
130
125
T
tp
D = tp/T
140
120
Reverse Current, IR (mA) PBYR6045WT
0.01
0.1
1
10
100
1000
0
10
20
30
40
50
Reverse Voltage, VR (V)
Tj =25C
Tj =75C
Tj =50C
Tj =100C
Tj =125C
PBYR6045WT
0
5
10
15
20
25
0
5
10
15
20
25
30
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) (C)
150
a = 1.57
1.9
2.2
2.8
145
140
135
125
4
130
PBYR6045WT
100
1000
10000
1
10
100
VR / V
Cd / pF
PBYR6045WT
0
5
10
15
20
25
30
35
40
45
50
55
60
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage, VF (V)
Forward Current, IF (A)
Tj = 25 C
Tj =125 C
typ
max
PBYR6045WT
0.001
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
pulse width, tp (s)
1E-02
1E-01
1E+00
1E+01
Transient Thermal Impedance, Zth j-mb (K/W)
Single pulse
tp
P
t
D
December 1998
3
Rev 1.000
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