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參數(shù)資料
| 型號： | PBYR30100PT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | KVM EXTDR, DUAL ACCESS AND BUILT IN SKEW COMP |
| 中文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | PBYR30100PT |
Philips Semiconductors
Product Specification
Rectifier Diode
Schottky Barrier
PBYR30100PT series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
in free air.
MIN.
-
-
-
TYP.
-
-
45
MAX.
1.4
1.0
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage (per diode)
CONDITIONS
I
F
= 15 A; T
j
= 125C
I
F
= 30 A; T
j
= 125C
I
F
= 15 A; T
j
= 25C
V
R
= V
RWM
; T
j
= 25 C
V
= V
; T
j
= 125 C
f = 1MHz; V
R
= 5V; T
j
= 25 C to
125 C
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.77
5.0
5.0
600
MAX.
0.70
0.85
0.85
150
15
-
UNIT
V
V
V
μ
A
mA
pF
I
R
Reverse current (per diode)
C
d
Junction capacitance (per
diode)
October 1994
2
Rev 1.100
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