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參數(shù)資料
| 型號(hào)： | PBYR2525CT |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PARALLEL PRINTER CABLE W/RT-AN |
| 中文描述： | 肖特基整流二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 34K |
| 代理商： | PBYR2525CT |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR2525CT series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual nickel silicide schottky barrier
rectifier diodes in a plastic envelope
featuring low forward voltage drop
andabsenceofstoredcharge.These
devices
can
withstand
voltage
transients
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies with
3 V - 3.3 V outputs, or as or-ing
diodes in fault tolerant power supply
systems.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
PBYR25-
20CT
20
25CT
25
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Average output current (both
diodes conducting)
V
reverse
have
and
V
F
I
O(AV)
0.41
30
0.41
30
V
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-20
20
20
20
-25
25
25
25
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current, per diode
-
-
-
-
V
V
V
A
T
mb
≤
109 C
square wave;
δ
= 0.5;
T
mb
≤
135 C
30
I
O(RMS)
-
43
A
I
FRM
-
30
A
T
≤
135 C
t = 10 ms
t = 8.3 ms
sinusoidal T
= 125 C prior
to surge; with reapplied
V
t = 10 ms
I
FSM
-
-
180
200
A
A
I
2
t
I
RRM
I
2
t for fusing
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
-
-
162
2
A
2
s
A
I
RSM
t
p
= 100
μ
s
-
2
A
T
stg
T
j
-65
-
175
150
C
C
1 2 3
tab
k
a1
1
a2
3
2
January 1997
1
Rev 1.000
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