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參數(shù)資料
| 型號(hào)： | PBYR225CT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Connector assemblies, Computer cables; |
| 中文描述： | 2 A, 25 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 42K |
| 代理商： | PBYR225CT |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR225CT series
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-sp
= f(t
p
).
0
0.5
1
1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
D = 1.0
0.5
0.2
0.1
PBYR225CT
Rs = 0.038 Ohms
Vo = 0.35 V
IF(AV) / A
PF / W
Tsp(max) / C
150
148.3
146.6
143.2
139.8
144.9
141.5
138.1
T
I
D =
t
p
t
p
T
t
1
10
100
10
100
1000
BYV116
VR / V
Cd / pF
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.5
1
1.5
2
PBYR225CT
VF / V
IF / A
Tj = 25 C
Tj = 125 C
typ
max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.01
0.1
1
10
100
PBYR225CT
pulse width, tp (s)
Transient thermal impedance, Zth j-sp (K/W)
D =
t
p
t
p
T
T
P
t
D
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
BYV116
VR / V
IR / A
Tj = 25 C
50 C
75 C
100 C
125 C
150 C
March 1998
3
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| PBYR235CT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| PBYR240 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
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