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參數(shù)資料
| 型號： | PBYR1046X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| 中文描述： | 肖特基整流二極管（肖特基勢壘整流二極管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 41K |
| 代理商： | PBYR1046X |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045F, PBYR1045X series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Isolated mounting tab
V
R
= 40 V/ 45 V
I
F(AV)
= 10 A
V
F
≤
0.59 V
GENERAL DESCRIPTION
Schottkyrectifierdiodesinaplasticenvelopewithelectricallyisolatedmountingtab.Intendedforuseasoutputrectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR1045F series is supplied in the SOD100 package.
The PBYR1045X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode
2
anode
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
PBYR10
40F
40X
40
45F
45X
45
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
-
V
V
RWM
-
40
45
V
V
R
I
F(AV)
T
hs
≤
95 C
square wave;
δ
= 0.5; T
hs
≤
112 C
-
-
40
45
V
A
10
I
FRM
square wave;
δ
= 0.5; T
hs
≤
112 C
-
20
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
100
110
A
A
I
RRM
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
k
1
a
2
1
2
case
1
2
case
July 1998
1
Rev 1.200
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