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參數(shù)資料
| 型號： | PBYL2520CT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| 中文描述： | 12.5 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | PBYL2520CT |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL2525CT, PBYL2525CTB series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
0
5
10
15
20
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
PBYL2525CT
Rs = 0.012 Ohms
Vo = 0.320 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
144
138
132
126
120
114
T
I
D =
t
p
t
p
T
t
0
5
10
15
20
25
10uA
100uA
1mA
10mA
100mA
1A
PBYR1525CT
VR / V
IR / A
100
25
Tj = 150 C
125
75
50
0
2
4
6
8
10
12
0
2
4
6
8
10
a = 1.57
1.9
2.2
2.8
4
PBYL2525CT
Rs = 0.012 Ohms
Vo = 0.32 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
144
138
132
126
120
1
10
100
100
1000
10000
PBYR1525CT
VR / V
Cd / pF
0
0.2
0.4
0.6
0.8
1
0
5
10
15
20
25
30
PBYR1525CT
VF / V
IF / A
Tj = 125 C
Tj = 25 C
typ
max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYR2525CT
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
March 1998
3
Rev 1.000
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| PBYL2520CTB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
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