參數(shù)資料
型號(hào): PBYL1520CT
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: Rectifier diodes Schottky barrier(肖特基勢(shì)壘整流二極管)
中文描述: 7.5 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 44K
代理商: PBYL1520CT
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL1525CT, PBYL1525CTB series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
PBYL1525CT
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
Rs = 0.0213 Ohms
Vo = 0.29 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
T
I
D =
t
p
t
p
T
t
147
144
141
138
135
132
129
126
0
25
50
100mA
10mA
1mA
100uA
10uA
Reverse current, IR (A)
Reverse voltage, VR (V)
50 C
75 C
100 C
125 C
PBYR1045CTD
Tj = 25 C
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
a = 1.57
1.9
2.2
2.8
4
PBYL1525CT
Tmb(max) / C135
138
141
144
147
150
Vo = 0.29 V
Rs = 0.0213 Ohms
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
1
10
100
100
1000
PBYR1025CTD
Reverse voltage, VR (V)
Junction capacitance, Cd (pF)
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
PBYR1025CTD
Forward voltage, VR (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYL1025
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
March 1998
3
Rev 1.000
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